Magnetic resonance and the structure of magnesium acceptors in gallium nitride
Magnetic resonance and the structure of magnesium acceptors in gallium nitride
复制标题
磁共振和氮化镓中镁受体的结构
DOI：
10.1103/physrevb.87.235208
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发表时间：
2013
影响因子：
3.7
通讯作者：
J. Davies
中科院分区：
文献类型：
--
作者：
J. Davies
近年来，人们对掺镁GaN中受体态的详细结构进行了一些理论和实验研究。因此，浅的有效质量的受体已被归因于简单的替代Mg在Ga网站在材料的非应变区域，而早期的建议，Mg与H似乎已被最近的研究折扣。更深的受主态也归因于简单的替代Mg，但在应变区。本文件利用电子自旋共振和光学检测的磁共振的广泛数据，以确认这些任务，并进一步强调了应变在影响受体状态的详细性质所发挥的关键作用。特别是，中性深受主态被发现是由位于基面上的N原子上的p-类轨道中的空穴的局部化形成的，而不是相对于Mg掺杂剂沿沿着。
In recent years there have been several theoretical and experimental investigations concerned with the detailed structure of the acceptor states in Mg-doped GaN. Thus, the shallow effective-mass-like acceptor has been attributed to simple substitutional Mg at Ga sites in unstrained regions of the material, while earlier suggestions that the Mg is associated with H appear to have been discounted by more recent studies. Deeper acceptor states have also been attributed to simple substitutional Mg, but in strained regions. The present paper makes use of the extensive data available from electron spin resonance and optically detected magnetic resonance to confirm these assignments and to highlight further the crucial role played by strain in influencing the detailed nature of the acceptor states. In particular, the neutral deep acceptor states are found to be formed by localization of the holes in p-like orbits on N atoms that lie in the basal plane, rather than along the c axis, relative to the Mg dopant.