Secondary-electron emission from specularly reflected MeV protons
Secondary-electron emission from specularly reflected MeV protons
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镜面反射 MeV 质子的二次电子发射
DOI：
10.1103/physreva.58.1282
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发表时间：
1998
影响因子：
2.9
通讯作者：
M. Mannami
中科院分区：
文献类型：
--
作者：
K. Kimura;S. Ooki;Gou Andou;K. Nakajima;M. Mannami
测量了由 SnTe(001) 表面镜面反射的 MeV 质子引起的二次电子产额。根据观察到的二次电子产额，可以得出与位置相关的二次电子生产率 $P(x)$ 作为距表面距离 $x$ 的函数。获得的 $P(x)$ 可以用直接电子激发以及质子激发的体和表面等离子体激元的衰变来解释。表面等离激元衰变成电子空穴对的概率估计为 $\ensuremath{\sim}30%.$
Secondary-electron yield induced by MeV protons specularly reflected from a SnTe(001) surface is measured. From the observed secondary-electron yield, the position-dependent secondary-electron production rate $P(x)$ is derived as a function of distance $x$ from the surface. The obtained $P(x)$ can be explained in terms of the direct electron excitation as well as the decay of both bulk and surface plasmons excited by the proton. The probability of surface plasmon decay to an electron-hole pair is estimated to be $\ensuremath{\sim}30%.$