Electrochemical growth of ultraflat Au(111) epitaxial buffer layers on H–Si(111)
Electrochemical growth of ultraflat Au(111) epitaxial buffer layers on H–Si(111)
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H-Si(111)上超平坦Au(111)外延缓冲层的电化学生长
DOI：
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发表时间：
2008
期刊：
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通讯作者：
P. Allongue
中科院分区：
文献类型：
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作者：
P. Prod'homme;F. Maroun;R. Cortès;P. Allongue
沉积在衬底上的薄金属层（缓冲层）广泛应用于许多研究领域和微电子工业。在这项工作中，我们提出了x射线衍射测量和原子力显微镜观察，证明了高质量的超薄Au（111）外延膜可以在明确的h端相邻Si（111）表面上由氯化金溶液电沉积。此外，得到的薄膜没有明显的晶界。这一结果似乎与经典的生长理论相冲突，需要应用非常规的电沉积条件，在这种条件下促进强烈的析氢反应。
Thin metal layers deposited on a substrate (buffer layers) are widely employed in many fields of research and in microelectronic industry. In this work we present x-ray diffraction measurements and atomic force microscopy observations which demonstrate that high quality ultrathin Au(111) epitaxial films can be electrodeposited from a gold chloride solution on a well-defined H-terminated vicinal Si(111) surface. In addition, the obtained films present no apparent grain boundary. This result, which seems in conflict with classical growth theory, requires applying unconventional electrodeposition conditions in which a strong hydrogen evolution reaction is promoted.