The influence of n-AlGaN inserted layer on the performance of back-illuminated AlGaN-based p-i-n ultraviolet photodetectors
The influence of n-AlGaN inserted layer on the performance of back-illuminated AlGaN-based p-i-n ultraviolet photodetectors
复制标题
n-AlGaN插入层对背照式AlGaN基p-i-n紫外光电探测器性能的影响
DOI：
10.1002/pssa.201700358
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Song Hang
中科院分区：
文献类型：
--
作者：
Chen Yiren;Zhang Zhiwei;Li Zhiming;Jiang Hong;Miao Guoqing;Song Hang
在本文中，背照式p-i-n AlGaN基紫外光电探测器（UV-PD）与没有n-AlGaN插入层进行了比较。结果表明，n-AlGaN中间层的引入显著降低了AlGaN基UV-PD的暗电流。所涉及的机制是明确的，可以归因于n-AlGaN夹层的作用，耗尽隔离AlGaN材料的位错产生的泄漏路径。此外，它还极大地改善了p-i-n AlGaN基UV-PD的光谱性能，这可能与n-AlGaN插入层引入的额外内置电场有关，该电场有助于分离和传输光子产生的载流子。
In this paper, comparison between back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetectors (UV‐PDs) with and without an n‐AlGaN inserted layer is carried out. The results show that the introduction of n‐AlGaN interlayer significantly reduces the dark current of AlGaN‐based UV‐PDs. The mechanism involved is clarified and can be attributed to the role of n‐AlGaN interlayer which depletes to isolate the leakage paths generated by dislocations of AlGaN material. Besides, it also greatly improves the spectral performances of the p‐i‐n AlGaN‐based UV‐PDs, which can be related to the additional built‐in electric fields introduced by n‐AlGaN inserted layer that contribute to separate and transport the photon‐generated carriers.