Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
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DOI：
10.1063/1.118455
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发表时间：
1997-02-24
影响因子：
4
通讯作者：
Nakamura, S
中科院分区：
文献类型：
--
作者：
Narukawa, Y;Kawakami, Y;Nakamura, S
采用透射电子显微镜和能量色散X射线微区分析方法，对由In0.20Ga0.80N（3 nm）/In0.05Ca0.9N（6 nm）多量子威尔斯阱结构组成的紫色激光二极管进行了结构分析。发现阱层中的明暗对比度对应于In组成的差异。主要的辐射复合归因于位于深陷阱中的激子，这些激子可能来自充当量子点的威尔斯中的富In区。在主要自发辐射带的高能侧观察到光泵激光。(C)1997年美国物理学会。
Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ca0.9N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from the cross-sectional direction. It was found that the contrast of light and shade in the well layers corresponds to the difference in In composition. The main radiative recombination was attributed to excitons localized at deep traps which probably originate from the In-rich region in the wells acting as quantum dots. Photopumped lasing was observed at the high energy side of the main spontaneous emission bands. (C) 1997 American Institute of Physics.