Angle‐resolved photoemission and band structure of the alloy Al0.5Ga0.5As compared to that of the superlattice [(AlAs)2/(GaAs)2]10
Angle‐resolved photoemission and band structure of the alloy Al0.5Ga0.5As compared to that of the superlattice [(AlAs)2/(GaAs)2]10
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合金 Al0.5Ga0.5As 的角分辨光电发射和能带结构与超晶格 [(AlAs)2/(GaAs)2]10 的比较
DOI：
10.1116/1.578735
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
L. Ley
中科院分区：
文献类型：
--
作者：
X. D. Zhang;J. Riley;R. Leckey;G. Kemister;R. Denecke;J. Faul;L. Ley
用角分辨光电子能谱法比较了Al0.5Ga0.5As合金与超晶格[(AlAs)2/(GaAs)2]10合金的电子结构。两种材料的实验数据已根据相同的方法获得和解释。由于人工诱导生长方向的周期性，在超晶格中观察到的小带隙在合金中不存在。这表明合金在生长过程中，没有表现出自诱导长程有序的迹象。发现合金的临界点能量X3v比GaAs的值更接近AlAs的值，与非线性插值方案一致，并且高于超晶格的Γ4v（X3v）点。
A comparison between the electronic structure of the alloy Al0.5Ga0.5As and that of the superlattice [(AlAs)2/(GaAs)2]10 as determined by angle‐resolved photoelectron spectroscopy is presented. Experimental data have been acquired and interpreted according to identical methodologies for the two materials. A mini band gap observed in the superlattice due to the artificially induced periodicity in the growth direction is not present in the alloy. This suggests that the alloy as grown, exhibits no evidence of self‐induced long range order. The critical point energy X3v of the alloy is found to lie closer to the value for AlAs than that for GaAs, in agreement with a nonlinear interpolation scheme, and to be higher than the Γ4v(X3v) point of the superlattice.