Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si"001…
Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si"001…
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DOI：
10.1063/1.2032620
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发表时间：
2005-08
影响因子：
4
通讯作者：
C. Preinesberger;G. Pruskil;S. K. Becker;M. Dähne;D. Vyalikh;S. Molodtsov;C. Laubschat;F. Schiller
中科院分区：
文献类型：
--
作者：
C. Preinesberger;G. Pruskil;S. K. Becker;M. Dähne;D. Vyalikh;S. Molodtsov;C. Laubschat;F. Schiller
在Si（001）上通过自组装可以形成宽度为15-100 A，长度超过1000 A的硅化镝纳米线。由于Si（001）表面的各向异性，这些纳米线在两个正交方向上生长。在这项研究中，我们证明了在相邻基质上生长导致导线的完美单向排列。这允许通过角分辨光电子能谱研究显示纳米线的各向异性金属丰度。
Dysprosium-silicide nanowires with widths of 15–100 A and lengths exceeding several 1000 A can be formed on Si(001) by self-assembly. Because of the anisotropy of the Si(001) surface, these nanowires grow in two orthogonal directions. In this study we demonstrate that growth on vicinal substrates results in a perfect unidirectional alignment of the wires. This allows an investigation by angle-resolved photoelectron spectroscopy showing anisotropic metallicity of the nanowires.