Metallic interface induced by electronic reconstruction in crystalline-amorphous bilayer oxide films
Metallic interface induced by electronic reconstruction in crystalline-amorphous bilayer oxide films
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晶体-非晶双层氧化物薄膜中电子重构诱导的金属界面
DOI：
10.1016/j.scib.2019.08.026
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发表时间：
2019
期刊：
影响因子：
18.9
通讯作者：
Enriquez, Erik
中科院分区：
文献类型：
--
作者：
Lü, Xujie;Chen, Aiping;Dai, Yaomin;Wei, Bin;Xu, Hongwu;Wen, Jianguo;Li, Nan;Luo, Yongkang;Gao, Xiang;Enriquez, Erik
在金属氧化物之间的界面处可以出现非凡的电子特性。1-10界面行为使从电子通信、能量转换和存储到数据处理和存储的各种现代技术成为可能。近年来，在探索和利用这些接口的涌现和/或增强特性方面取得了前所未有的进展，并且越来越清楚的是，接口工程在不久的将来为先进设备提供了新的机会。利用界面操纵材料特性的能力为实现有趣的现象提供了一种有效的手段。例子包括工程氧化物薄膜中的界面超导性3 -4，11-12，以及两种绝缘氧化物（如LaAlO 3（LAO）和SrTiO 3（STO））之间界面处的高迁移率电子（空穴）气。1，13-16在两种绝缘材料之间形成高导电甚至超导界面为开发高性能平台开辟了一条新途径，例如透明导电氧化物（TCO）薄膜，这代表了电子和光电应用的理想配置。5
Extraordinary electronic properties can emerge at the interfaces between metal oxides. 1-10 Interfacial behaviors have enabled a wide range of modern technologies from electronic communication, energy conversion and storage, to data processing and memory. In recent years, unprecedented progress has been made in exploring and exploiting the emergent and/or enhanced properties of these interfaces, and it is becoming clear that interface engineering provides a new opportunity for advanced devices in the near future. The capability of using interfaces to manipulate material properties offers an effective means to achieve intriguing phenomena. Examples include the interfacial superconductivity in engineered oxide thin films3-4, 11-12, and a high-mobility electron (hole) gas at the interface between two insulating oxides such as LaAlO3 (LAO) and SrTiO3 (STO). 1, 13-16 The formation of highly conducting or even superconducting interfaces between two insulating materials opens a new route for the development of highperformance platforms such as transparent conducting oxide (TCO) films, which represents an ideal configuration for electronic and optoelectronic applications. 5