Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier
Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier
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高磁场对异质结构场效应晶体管低噪声放大器噪声温度的影响
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
R. Bradley
中科院分区：
文献类型：
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作者：
E. Daw;R. Bradley
我们提出的异质结场效应晶体管（HFET）的低噪声放大器工作在683 MHz的高静态磁场中的噪声温度的测量结果。测量结果表明，放大器的噪声温度从零场的4.2K上升到3.6T时的7.0K。该效应高度依赖于放大器相对于磁场的取向。我们提出了一个解释这种效应，其中的HFET沟道中的电子的路径被改变，由于洛伦兹力从所施加的领域，影响HFET的电流。基于该模型的计算结果与我们的测量结果是一致的。
We present the results of measurements of the noise temperature of a heterostructure field-effect transistor (HFET) low-noise amplifier operating at 683 MHz in high static magnetic fields. These measurements indicate that the amplifier noise temperature increases from 4.2 K in zero field to 7.0 K at 3.6 T. The effect is highly dependent on the orientation of the amplifier with respect to the magnetic field. We propose an explanation of this effect in which the paths of the electrons in the HFET channel are altered due to the Lorentz force from the applied field, affecting the HFET transconductance. Calculations based on this model are shown to be consistent with our measurements.