EFFECT OF ONE MONOLAYER OF SURFACE GOLD ATOMS ON THE EPITAXIAL-GROWTH OF INAS NANOWHISKERS
EFFECT OF ONE MONOLAYER OF SURFACE GOLD ATOMS ON THE EPITAXIAL-GROWTH OF INAS NANOWHISKERS
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DOI：
10.1063/1.108329
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发表时间：
1992-10-26
影响因子：
4
通讯作者：
HIRUMA, K
中科院分区：
文献类型：
--
作者：
YAZAWA, M;KOGUCHI, M;HIRUMA, K
这封信表明，在SiO2图案化的GaAs衬底上选择性异质外延纳米级InAs晶须[Yazawa，Koguchi和Hiruma，Appl. Phys. Lett. 58，1080（1991））是由用于蚀刻SiO2掩模的碳氟化合物等离子体蚀刻工艺产生的具有Au的表面污染引起的。我们证明了在InAs（111）B衬底上外延生长出高密度（10（10）/cm ~ 2）的直径为20-30 nm的InAs纳米晶须，在InAs（111）B衬底上沉积了单层的Au原子。这种线状生长似乎是由Au团簇和InAs衬底之间的反应产生的超细合金液滴引起的。
This letter shows that selective heteroepitaxy of nanometer-scale InAs whiskers on SiO2-patterned GaAs substrates [Yazawa, Koguchi, and Hiruma, Appl. Phys. Lett. 58, 1080 (1991)) is induced by surface contamination with Au resulting from the fluorocarbon plasma etching process used to etch the SiO2 mask. We demonstrate that high densities (congruent-to 10(10)/cm2) of InAs nanowhiskers 20-30 nm in diameter can be epitaxially grown on InAs (111) B substrates onto which 1 monolayer of Au atoms had been deposited. This wirelike growth appears to be induced by ultrafine alloy droplets generated by the reactions between Au-clusters and InAs substrates.