Tunable impedance matching networks based on phase-switched impedance modulation
Tunable impedance matching networks based on phase-switched impedance modulation
复制标题
基于相位开关阻抗调制的可调谐阻抗匹配网络
DOI：
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复制
发表时间：
2017
期刊：
影响因子：
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通讯作者：
D. Perreault
中科院分区：
文献类型：
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作者：
A. Jurkov;A. Radomski;D. Perreault
提供准确、快速和动态控制的阻抗匹配的能力为广泛的现有和新兴射频（RF）功率应用提供了显著优势。这项工作开发了一种新型的可调阻抗匹配网络（TMN），使更快，更准确的阻抗匹配比传统技术的组合。该实现基于窄带技术，在此称为相位切换阻抗调制（PSIM），其需要在RF工作频率下切换无源元件，从而有效地调制它们的阻抗。所提出的方法提供了吸收器件的寄生效应和零电压开关（ZVS）的有源器件，我们引入控制技术，使ZVS操作保持在整个操作条件。基于PSIM的TMN的原型开发，提供了一个50欧姆的负载阻抗范围内的电感耦合等离子体工艺适合匹配。原型TMN工作在以13.56 MHz为中心的频率上，输入RF功率水平高达150 W。
The ability to provide accurate, rapid and dynamically-controlled impedance matching offers significant advantages to a wide range of present and emerging radio-frequency (RF) power applications. This work develops a new type of tunable impedance matching networks (TMN) that enables a combination of much faster and more accurate impedance matching than is available with conventional techniques. This implementation is based on a narrow-band technique, termed here phase-switched impedance modulation (PSIM), which entails the switching of passive elements at the RF operating frequency, effectively modulating their impedances. The proposed approach provides absorption of device parasitics and zero-voltage switching (ZVS) of the active devices, and we introduce control techniques that enable ZVS operation to be maintained across operating conditions. A prototype PSIM-based TMN is developed that provides a 50 Ohms match over a load impedance range suitable for inductively-coupled plasma processes. The prototype TMN operates at frequencies centered around 13.56 MHz at input RF power levels of up to 150 W.
用于 GaN-HEMT 功率放大器负载调制的高压变容二极管的表征
DOI：
10.1109/icton.2015.7193497
发表时间：
2015
期刊：
2015 17th International Conference on Transparent Optical Networks (ICTON)
影响因子：
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作者：
Arnous;Barbin
通讯作者：
Barbin