Study of the early stage of SiO2 growth by a TEOS–O2 plasma mixture using a three-dimensional Monte Carlo model
Study of the early stage of SiO2 growth by a TEOS–O2 plasma mixture using a three-dimensional Monte Carlo model
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使用三维蒙特卡罗模型研究 TEOS-O2 等离子体混合物中 SiO2 生长的早期阶段
DOI：
10.1116/1.1362676
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
G. Turban
中科院分区：
文献类型：
--
作者：
A. Rhallabi;G. Turban
本文采用三维动力学Monte Carlo方法研究了TEOS-O2等离子体混合气体中SiO2薄膜的生长过程。动力学表面机制考虑到成核相过程，反应性TEOS片段的物理吸附，和迁移过程。SiO2生长的主要过程是两个表面硅位之间氧桥的形成。模拟结果显示了衬底能量和形核中心的比例对形核相演化的影响。对于基材的高表面能，获得良好的粘附性。高表面能通过减少早期阶段的脱附过程来增加表面衬底上的反应性物种的迁移率。另一方面，氧化几率的增加导致薄膜表面物理吸附物质的迁移率降低，从而导致沉积薄膜的均方根粗糙度增加。
Three-dimensional kinetic Monte Carlo calculations have been carried out to study the film growth of SiO2 by a TEOS–O2 plasma mixture. The kinetic surface mechanisms take into account the nucleation phase process, the physisorption of reactive TEOS fragments, and the migration process. The main process contributing to the SiO2 growth is the formation of the oxygen bridge between two surface silicon sites. The simulations show the role of the substrate energy and the percentage of the nucleation center on the nucleation phase evolution. Good adhesion is obtained for a high surface energy of the substrate. A high surface energy increases the mobility of the reactive species on the surface substrate by the reduction of the desorption process in the early stage. On the other hand, the increase of the oxidation probability leads to the decrease of the mobility of physisorbed species on the film surface and, consequently, to increased root-mean-square roughness of the deposited film.