Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
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DOI：
10.1063/1.2723543
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发表时间：
2007-05-07
影响因子：
4
通讯作者：
Chung, JaeGwan
中科院分区：
文献类型：
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作者：
Kang, Donghun;Lim, Hyuck;Chung, JaeGwan
在这项研究中，作者报告了与薄膜表面密切相关的氧化铟镓锌 (GIZO) 的特性。在环境空气中，GIZO薄膜晶体管的开启电压约为-7V。然而，在8x10(-6)Torr的压力下，开启电压急剧转变至负栅极偏压方向的近-47V。当氧气被引入室内时，开启电压返回到正常值，即空气的电压值。据信，吸附的氧在表面下方形成耗尽层，导致导通偏移。由于氧吸附，通道的载流子浓度从1x10(19)到1x10(20)cm(-3)变化。 (C) 2007 年美国物理研究所。
In this study, the authors report characteristic of indium gallium zinc oxides (GIZOs) which is strongly associated with the film surface. In ambient air, turn-on voltage of GIZO thin film transistors is approximately -7 V. However, at the pressure of 8x10(-6) Torr, the turn-on voltage dramatically shifts to nearly -47 V of the negative gate bias direction. When the oxygen is introduced in the chamber, the turn-on voltage returns to the normal value, that of air. It is believed that the adsorbed oxygen forms depletion layer below the surface, resulting in V-on shifts. The carrier concentration of the channel varies from 1x10(19) to 1x10(20) cm(-3) due to oxygen adsorption. (C) 2007 American Institute of Physics.