High density plasma etching of low k dielectric polymers in oxygen-based chemistries
High density plasma etching of low k dielectric polymers in oxygen-based chemistries
复制标题
氧基化学中低 k 介电聚合物的高密度等离子体蚀刻
DOI：
10.1116/1.1358856
复制
发表时间：
2001
影响因子：
1.4
通讯作者：
M. Bonvalot
中科院分区：
文献类型：
--
作者：
D. Fuard;O. Joubert;L. Vallier;M. Bonvalot
我们研究了在各种等离子体操作条件下无卤素和无硫化学物质中低介电常数聚合物的蚀刻。聚合物石墨化现象相当于芳烃网络向无定形碳主链的转变，已通过原位质谱和准原位X射线光电子能谱（XPS）在几种等离子体条件下进行了充分研究。由于在聚合物侧壁上形成钝化层，防止等离子体的氧反应性物质发生自发化学攻击，因此实现了高深宽比接触孔的轮廓控制。 XPS studies show that the passivation layer only forms under conditions where the plasma induces a polymer graphitization.在导致聚合物石墨化的等离子体条件、等离子体气相中检测到的重碳副产物的存在以及钝化层的形成之间观察到强相关性。
We have studied the etching of low dielectric constant polymers in halogen- and sulfur-free chemistries under various plasma operating conditions. The polymer graphitization phenomenon, which corresponds to the transformation of the aromatic hydrocarbon network into an amorphous carbon backbone, has been fully investigated under several plasma conditions by in situ mass spectrometry and quasi-in situ x-ray photoelectron spectroscopy (XPS). Profile control in high aspect ratio contact holes is obtained thanks to the formation of a passivation layer on the polymer sidewalls preventing the spontaneous chemical attacks by the oxygen reactive species of the plasma. XPS studies show that the passivation layer only forms under conditions where the plasma induces a polymer graphitization. Strong correlations are observed between plasma conditions leading to the polymer graphitization, the presence of heavy carbon byproducts detected in the plasma gas phase, and the passivation layer formation.