Imitation of the Instantaneous Change Behaviors of Photoconductive Detectors
Imitation of the Instantaneous Change Behaviors of Photoconductive Detectors
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发表时间：
2004
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通讯作者：
Ma Li-qin
中科院分区：
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作者：
Ma Li-qin
同时考虑了半导体光导探测器在激光照射下的光导效应和热效应。建立了光导载流子的输运模型和热传递模型。计算了不同激光辐照密度下PC型HgCdTe探测器的光导载流子浓度和热平衡载流子浓度。进一步模拟了探测器的瞬时变化行为。模拟结果与实验结果吻合较好。
Photoconductive effect and heat effect in semiconductor photoconductive detectors when they are irradiated by laser were considered simultaneously. A transportation model of photoconductive carriers and heat transmission model were established. The photoconductive carriers consistency and the heat equilibrium carriers consistency in PC-type HgCdTe detectors under various laser irradiation density were calculated. Instantaneous change behaviors of the detectors were imitated further. The imitative results are identical with experimental results.