GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
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DOI：
10.1021/nl9041774
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发表时间：
2010-05-01
期刊：
影响因子：
10.8
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Tomioka, Katsuhiro;Motohisa, Junichi;Fukui, Takashi
本文报道了用选择区域金属有机物气相外延技术在硅衬底上集成砷化镓发光二极管（NW-LED）。在Si衬底上直接制备了具有径向p-n结的垂直排列GaAs/AlGaAs核-多壳纳米线和NW-LED阵列。电致发光（EL）的阈值电流为0.5mA（电流密度约为0.4A/cm（2）），并且EL强度随着电流注入的增加而超线性地增加，表明超发光行为。这封信中描述的技术可以帮助打开新的可能性单片和片上集成的III-V纳米线在硅上。
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.