Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
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DOI：
10.7567/apex.8.062702
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发表时间：
2015-06-01
影响因子：
2.3
通讯作者：
Narui, Hironobu
中科院分区：
文献类型：
--
作者：
Izumi, Shouichiro;Fuutagawa, Noriyuki;Narui, Hironobu
我们已经成功演示了带有全电介质反射器的基于 GaN 的垂直腔表面发射激光器 (VCSEL) 的室温连续波操作，这些激光器是使用外延横向过度生长制造的。 VCSEL 在 446 nm 激光波长下表现出 8 mA 的阈值电流和 4.5 V 的阈值电压。 8μm直径的电流孔径的最大输出功率为0.9mW，这得益于GaN衬底的高导热性。 (C) 2015 日本应用物理学会
We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibited a threshold current of 8 mA and a threshold voltage of 4.5 V at a lasing wavelength of 446 nm. The maximum output power was 0.9 mW for an 8-mu m-diameter current aperture, which was made possible because of the high thermal conductivity of the GaN substrate. (C) 2015 The Japan Society of Applied Physics