C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
复制标题
低温化学气相沉积法生长的 Si1-yCy 外延膜的 C 稳定性
DOI：
10.1143/jjap.42.1499
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
S. Yagi;K. Abe;A. Yamada;M. Konagai
研究了Si_（1-y）Cy薄膜中C（Csub）的热稳定性。采用SiH 4和H2低温等离子体增强化学气相沉积法在Si（001）衬底上生长了Si 1-yCy薄膜。使用C2 H2或SiH 2（CH 3）2作为C源气体。模拟结果考虑了Si_（1-y）Cy中Si-C-H体系络合物的化学反应，很好地解释了Si_（1-y）Cy薄膜的退火行为和热稳定性。在高温退火过程中，Csub的热扩散导致3C-SiC的析出。从模拟中估计沉淀的活化能为3.18-3.23 eV。计算和实验结果表明，随着薄膜中Csub初始含量的增加，Si_（1-y）Cy的热稳定性降低。
Thermal stability of the substitutional C (Csub) in the Si1-yCy film has been investigated. The Si1-yCy films were grown on Si(001) substrates by low-temperature plasma-enhanced chemical vapor deposition using SiH4 and H2. C2H2 or SiH2(CH3)2 were used as C source gases. The simulation taking into account the chemical reactions of the complexes of the Si–C–H system in the Si1-yCy well explained the annealing behavior and thermal stability of the Si1-yCy films. During high-temperature annealing, thermal diffusion of Csub occurred resulting in 3C-SiC precipitation. The activation energy for the precipitation was estimated at 3.18–3.23 eV from the simulation. Both the calculated and experimental results showed that thermal stability of the Si1-yCy decreased with increasing initial Csub content in the film.