Flux-boosted sulfide crystal growth: Growth of CuInS2 crystals by NaCl-InCl3 evaporation
Flux-boosted sulfide crystal growth: Growth of CuInS2 crystals by NaCl-InCl3 evaporation
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助熔硫化物晶体生长：通过 NaCl-InCl3 蒸发生长 CuInS2 晶体
DOI：
10.1021/acs.cgd.5b01142
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发表时间：
2016
影响因子：
3.8
通讯作者：
Katsuya Teshima
中科院分区：
文献类型：
--
作者：
Masaaki Kurihara;Fumitaka Hayashi;Kousuke Shimizu;Hajime Wagata;Toshiyuki Hirano;Yasuhiro Nakajima;Kunio Yubuta;Shuji Oishi;Katsuya Teshima
铜-铟-镓-硫-硒（CIGSSe）由于其可调谐的光电特性而被用于光伏电池和光电阴极中，但是CIGSSe样品的制造通常需要在真空下的多阶段过程。本文采用助熔剂法生长技术，在常压和温和条件下，从NaCl-InCl 3助熔剂中成功地生长出了尺寸为1.5 μm的自形CuInS 2晶体。我们首先研究了助熔剂生长条件，如保温温度，溶质浓度，和保温时间生长高度结晶CuInS 2晶体。中等的保温温度（~ 550 °C）和高的溶质浓度（~ 70 mol %）可得到自形纯CuInS 2晶体。高分辨率透射电子显微镜显示出清晰的电子衍射斑点，表明所得的CuInS 2晶体具有高度结晶的本征四元晶系晶体结构。热重-差热分析结果表明，在550 °C时，CuInS 2晶体在助熔剂蒸发过程中生长得很好，助熔剂蒸发度达到81%左右。根据表征结果对CuInS 2晶体生长模式进行了讨论。
Copper–indium–gallium–sulfide–selenide (CIGSSe) is used in photovoltaic cells and photocathodes, because of its tunable optoelectronic properties, but the fabrication of CIGSSe samples usually requires a multistage process under vacuum. Herein we used a flux growth technique for the sulfide system and achieved efficient flux growth of idiomorphic copper–indium–sulfide CuInS2crystals of size ∼5 μm from a NaCl–InCl3flux under mild conditions at ambient pressures. We first examined the flux growth conditions such as holding temperature, solute concentration, and holding time for growing highly crystalline CuInS2crystals. A moderate holding temperature (∼550 °C) and high solute concentration (∼70 mol %) yielded idiomorphic pure CuInS2crystals. High-resolution transmission electron microscopy showed clear electron diffraction spots, indicating that the resultant CuInS2crystals had a highly crystalline, intrinsic tetragonal crystal structure. Thermogravimetry-differential thermal analysis showed that the CuInS2crystals grew efficiently during flux evaporation at 550 °C, at which the flux evaporation degree reached ∼81%. The CuInS2crystal growth mode is discussed based on the characterization results.