Synthesis of Amorphous Carbon Nitride Films Using Dissociative Excitation Reaction
Synthesis of Amorphous Carbon Nitride Films Using Dissociative Excitation Reaction
复制标题
利用解离激发反应合成非晶氮化碳薄膜
DOI：
10.1143/jjap.39.1258
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发表时间：
2000
影响因子：
1.5
通讯作者：
Haruhiko Ito
中科院分区：
文献类型：
--
作者：
H. Saitoh;H. Takamatsu;D. Tanaka;N. Ito;S. Ohshio;Haruhiko Ito
在这项研究中，我们的目标是生产高度氮掺杂的碳，所谓的氮化碳，薄膜没有掺入氢。在物理气相沉积工艺中，通过高能氮离子的照射增加氮含量而不引入氢。在化学气相沉积工艺中，由于使用烃反应物，氢应当被包括在膜中。在本研究中，尝试使用化学气相沉积装置合成具有高氮和低氢含量的氮化碳膜。首先，选择CH 3CN +Ar混合物作为包含氢的反应物。反应物的脱氢通过等离子体分解进行。第二，作为不含氢的反应体系，也选择BrCN+Ar作为起始原料。氰化物与Ar亚稳原子的离解激发反应产生CN自由基Ar（3 P 0，2）+BrCN →Ar+Br+CN（A2 H，B 2 H+，4 H+，4 H+）。这最终进行到CN自由基的沉积以在固态表面上形成氮化碳膜。当使用前一种反应物时，大量的氢保留在非晶氮化碳膜中，尽管氢的量随沉积条件而变化。使用后一种反应物形成的样品是具有非常少的氢的无定形氮化碳。用后一种反应物合成的样品的氮分数[N]/（[N]+[C]）高达~0.3，高于用前一种反应物合成的样品的氮分数。
In this investigation, we aim to produce highly nitrogen-doped carbon, so-called carbon nitride, films without the incorporation of hydrogen. In the physical vapor deposition process, irradiation by energetic nitrogen ions increases nitrogen content without the incorporation of hydrogen. In the chemical vapor deposition process, hydrogen should be included into the film due to the use of a hydrocarbon reactant. In this study, the synthesis of carbon nitride films having high nitrogen and low hydrogen contents was attempted using a chemical-vapor-deposition apparatus. First of all, a CH3CN+Ar mixture was selected as a reactant including hydrogen. Dehydrogenation of the reactant was carried out by plasma decomposition. Second, as a reaction system without hydrogen, BrCN+Ar was also selected for starting materials. The dissociative excitation reaction of cyanides with argon metastable atoms produces CN radicals, Ar(3P0,2)+BrCN →Ar+Br+CN(A2Πi, B 2Σ+, 4Σ+, 4Π). This finally proceeds to the deposition of CN radicals to form the carbon nitride film on a solid-state surface. When using the former reactant, large amounts of hydrogen remained in the amorphous carbon nitride films, although the amount of hydrogen varied with deposition conditions. The sample formed using the latter reactant was amorphous carbon nitride with very little hydrogen. The nitrogen fraction [N]/([N]+[C]) of the sample using the latter rectant is as high as ~0.3, higher than those obtained from the samples synthesized with the former reactant.