Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared
Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared
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DOI：
10.1016/j.infrared.2018.08.001
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发表时间：
2018-09-01
影响因子：
3.3
通讯作者：
Krier, A.
中科院分区：
文献类型：
--
作者：
Keen, J. A.;Repiso, E.;Krier, A.
人们对超晶格的开发一直很感兴趣，超晶格用于在技术上重要的中红外光谱范围内工作的光子器件。本文采用分子束外延技术在InAs（100）衬底上生长了InAs/InAs_（1-x）Sb_x（x = 0.04和x = 0.06）Ⅱ型应变层超晶格。样品的结构分析显示，良好的结晶质量，但不均匀的分布内的QWs，源于在生长过程中的偏析效应的Sb。在低温（4K）下获得了明亮的光致发光，并持续到300 K.两个原型样品生长含有相应的超晶格在有源区和制造成LED。中红外电致发光，从这两个LED在7-300 K的温度范围内，这两个设备表现出符合在室温下的4.2 μ m附近的主要CO2吸收带的发射。这些LED在室温下100 mA注入电流下产生8.2 μ W和3.3 μ W的输出功率，并且对于CO2检测和中红外气体传感应用的进一步发展是有意义的。
There is continuing interest in the development of superlattices for use in photonic devices operating in the technologically important mid-infrared spectral range. In this work type-II strained-layer superlattices of InAs/InAs1-xSbx(x = 0.04 and x = 0.06) were grown on InAs (1 0 0) substrates by MBE. Structural analysis of the samples revealed good crystalline quality but a non-uniform distribution of Sb within the QWs which originated from segregation effects during growth. Bright photoluminescence emission was obtained at low temperature (4 K) which persisted up to 300 K. Two prototype samples were grown containing the corresponding superlattices in the active region and fabricated into LEDs. Mid-infrared electroluminescence was obtained from both these LEDs over the temperature range 7-300 K and both devices exhibit emission coincident with the main CO2 absorption band near 4.2 mu m at room temperature. These LEDs produced output powers of 8.2 mu W and 3.3 mu W under 100 mA injection current at room temperature and are of interest for CO2 detection and further development for mid-infrared gas sensing applications.