A New Precursor Route to Semiconducting Zinc Oxide
A New Precursor Route to Semiconducting Zinc Oxide
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DOI：
10.1109/led.2016.2603520
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发表时间：
2016-08
影响因子：
4.9
通讯作者：
Talal M. Althagafi;Abbad Al Baroot;M. Grell
中科院分区：
文献类型：
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作者：
Talal M. Althagafi;Abbad Al Baroot;M. Grell
我们展示了一种新的前体路线的解决方案处理薄膜的II-VI族半导体氧化锌（ZnO）。将锌盐氯化锌（ZnCl 2）的水溶液喷雾热解到加热到至少250 °C的衬底上，得到不溶于水的膜，在365 nm处显示吸收边，并且当电选通显示薄膜晶体管时，其特性类似于通过已建立的乙酸锌（ZnAc）前体路线得到的ZnO膜;因此，我们将其鉴定为ZnO。尝试硫酸锌水溶液的喷雾热解以及冷喷涂和干燥的ZnCl 2膜的延迟热解的对照实验不导致半导体膜。由含水锌盐形成ZnO需要在热解时同时存在锌离子、氯离子和水。因此，我们认为实际的ZnO前体是ZnCl 2溶于水时形成的ZnClxH 2 O（4-x）物质[The Journal of Chemical Physics 39，3436（1963）]。所报道的工艺易于放大用于大面积ZnO涂层，例如，用于热控制的窗玻璃上，因为没有有机溶剂蒸气释放。
We demonstrate a new precursor route toward solution-processed films of the II-VI semiconductor zinc oxide (ZnO). Spray pyrolysis of aqueous solutions of the zinc salt zinc chloride (ZnCl2) onto a substrate heated to at least 250 °C gives films that are insoluble in water, display an absorption edge at 365 nm, and when electrically gated display thin film transistor characteristics similar to ZnO films derived via the established zinc acetate (ZnAc) precursor route; we, therefore, identify it as ZnO. Control experiments attempting spray pyrolysis of aqueous zinc sulfate solutions, and delayed pyrolysis of cold-sprayed and dried ZnCl2 films, do not lead to semiconducting films. Formation of ZnO from an aqueous Zinc salt requires the simultaneous presence of zinc ions, chloride ions, and water, at the time of pyrolysis. We, therefore, suggest that the actual ZnO precursor is the ZnClxH2O(4-x) species that forms when ZnCl2 dissolves in water [The Journal of Chemical Physics 39, 3436 (1963)]. The reported process is easy to upscale for large area ZnO coatings, e.g., on window panes for thermal control, as no organic solvent vapors are released.