Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
复制标题
使用等离子体增强化学气相沉积生长纳米管制造碳纳米管场效应晶体管
DOI：
10.1143/jjap.45.5485
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发表时间：
2006
影响因子：
1.5
通讯作者：
T. Mizutani
中科院分区：
文献类型：
--
作者：
H. Ohnaka;Y. Kojima;S. Kishimoto;Y. Ohno;T. Mizutani
单壁碳纳米管采用插入网格的等离子体增强化学气相沉积 (PECVD) 技术生长。使用 PECVD 生长的碳纳米管 (CNT) 证实了场效应晶体管的运行。通过测量器件的电流-电压 (I-V) 特性，在插入栅极的 PECVD 中证实了半导体纳米管的优先生长。根据金属碳纳米管电击穿的测量，生长半导体纳米管的概率估计超过 90%。
Single-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current–voltage (I–V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%.