Using EELS to observe composition and electronic structure variations at dislocation cores in GaN
Using EELS to observe composition and electronic structure variations at dislocation cores in GaN
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使用 EELS 观察 GaN 位错核心的成分和电子结构变化
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
N. Browning
中科院分区：
文献类型：
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作者：
I. Arslan;A. Bleloch;E. Stach;S. Ogut;N. Browning
自从最早观察到位错以来，大多数实验透射电子显微镜研究都集中在了解它们的结构特性上。然而，异质外延生长在晶格失配衬底上的二元、三元和甚至更复杂的半导体系统的广泛使用也突出了位错在确定器件的整体电子特性中的重要性。电子能量损失谱，当与原子分辨率Z-衬度成像结合使用时，提供了量化在这些半导体系统中的位错处发生的组成和电子结构（以及因此的电子性质）的变化的能力。本文描述了原子尺度电子能量损失谱背后的原理，并回顾了过去3年来将其应用于GaN薄膜中螺旋位错的工作。
Since the earliest observations of dislocations, the majority of the experimental transmission electron microscope studies have focused on understanding their structural properties. However, the extensive use of heteroepitaxial growth for binary, ternary and even more complex semiconductor systems on lattice mismatched substrates has also highlighted the importance of dislocations in determining the overall electronic properties of devices. Electron energy loss spectroscopy, when used in conjunction with atomic resolution Z-contrast imaging, provides the ability to quantify changes in both composition and electronic structure (and, therefore, electronic properties) that occur at dislocations in these semiconductor systems. In this paper, the principles behind atomic scale electron energy loss spectroscopy are described and work on their application to threading dislocations in GaN thin films performed over the last 3 years is reviewed.