Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition
Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition
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石墨烯辅助金属有机化学气相沉积高质量AlN
DOI：
10.7567/jjap.55.085501
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发表时间：
2016-08-01
影响因子：
1.5
通讯作者：
Li, Jinmin
中科院分区：
文献类型：
--
作者：
Zeng, Qing;Chen, Zhaolong;Li, Jinmin
采用金属有机化学气相沉积（MOCVD）技术在石墨烯/蓝宝石衬底上直接生长出高质量的AlN薄膜。采用低成本、无催化剂的常压化学气相沉积（APCVD）方法在蓝宝石表面直接生长石墨烯层。我们分析了石墨烯层对生长初期AlN成核的影响，发现石墨烯上稀疏的AlN晶粒通过横向聚结生长并形成连续的薄膜。石墨烯辅助的AlN薄膜光滑且连续，半最大全宽（FWHM）值为（0002），反射为360和622.2 arcsec，均低于直接生长在蓝宝石上的薄膜。石墨烯辅助AlN膜在AlN/蓝宝石界面附近的高分辨率TEM图像清楚地显示出石墨烯的存在，并且在AlN生长1200℃后，石墨烯仍保持其原始形态。
High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.