Radiation-hard semiconductor detectors for SuperLHC
Radiation-hard semiconductor detectors for SuperLHC
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DOI：
10.1016/j.nima.2005.01.056
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发表时间：
2005-04-01
影响因子：
1.4
通讯作者：
Zorzi, N
中科院分区：
文献类型：
--
作者：
Bruzzi, M;Adey, J;Zorzi, N
欧洲核子研究中心(CERN)的大型强子对撞机(LHC)的光度被设想增加到1035厘米-2 S-1，以扩大机器的物理覆盖范围。要开发升级后的大型强子对撞机的物理潜力，需要在距离相互作用点几厘米的地方进行有效的跟踪。因此，靠近相互作用区的半导体探测器将受到严重剂量的快速强子照射，内部跟踪器探测器将需要经受住高达1016厘米-2以上的快速强子通量。CERN-RD50项目“发展用于甚高亮度对撞机的辐射硬半导体器件”成立于2002年，目的是探索探测器材料和技术，使其能够运行达到或超过这一极限的器件。RD50所遵循的提高辐射耐受性的策略包括开发新的或缺陷工程探测器材料(碳化硅、GaN、直拉法和外延硅、富氧浮区硅)，改进现有探测器设计，并了解导致辐照探测器退化的微观缺陷。在这项工作中，将回顾和讨论RD50合作在辐射硬半导体探测器方面的最新进展。2005年由爱思唯尔出版。
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit.The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work. 2005 Published by Elsevier B.V.