Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices
Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices
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DOI：
10.1021/jp311951e
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发表时间：
2013-03-21
影响因子：
3.7
通讯作者：
Chen, Jen-Sue
中科院分区：
文献类型：
--
作者：
Chen, Ying-Chuan;Chung, Yu-Lung;Chen, Jen-Sue
在这项研究中，极性依赖和多电平电阻开关特性的Ta/TaOx/Pt器件进行了研究。电阻切换极性决定性地与Ta/TaOx界面的位置相关联，同时处于特定的切换极性，并且Ta/TaOx/Pt器件中的多个（四个）电阻状态通过在复位过程期间控制停止电压来实现，并且在连续读出测试下稳定超过10（4）s。X射线光电子能谱分析表明，Ta/TaOx界面存在丰富的氧空位。提出了一种氧空位聚集导电路径的结构示意图，其中Ta/TaOx界面充当氧空位库，并且空位的迁移可以由所施加的电场以及从Ta/TaOx界面发出的空位浓度梯度驱动。根据灯丝结构的变化，讨论了极性相关和多级电阻开关行为，并揭示了它们之间的相互关系。
In this study, polarity dependent and multilevel resistive switching characteristics of the Ta/TaOx/Pt device are investigated. The resistive switching polarity is decisively associated with the location of the Ta/TaOx interface while at a specific switching polarity, and multiple (four) resistance states in the Ta/TaOx/Pt device are achieved by controlling the stop voltage during the reset process and are stable for more than 10(4) s under continuous readout testing. X-ray photoelectron spectroscopy reveals that the Ta/TaOx interface is rich in oxygen vacancies. A schematic on the configurations of oxygen-vacancy aggregated conducting paths is proposed, where the Ta/TaOx interface acts as an oxygen vacancy reservoir, and the migration of vacancies can be driven by the applied electric field as well as the vacancy concentration gradient emanated from the Ta/TaOx interface. The polarity-dependent and multilevel resistive switching behaviors are then discussed in terms of filament configuration variation, and their interrelationship is visibly unveiled.