Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas.
Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas.
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DOI：
10.1103/physrevb.38.10798
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发表时间：
1988-11
期刊：
影响因子：
--
通讯作者：
Gold
中科院分区：
文献类型：
--
作者：
Gold
我们计算了无序二维电子气体在电子-杂质相互作用中最低阶的散射时间（决定电导率）和单粒子弛豫时间（决定态密度）。给出了${\mathrm{in}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ga}}_{\mathrm{x}}$As量子阱中杂质远端掺杂、均匀背景掺杂、界面粗糙度散射和合金无序散射的分析结果和数值结果。自洽效应也包括在内，并为估计电子-杂质相互作用最低阶计算结果的有效性提供了理论框架。在均匀背景掺杂的情况下，发现了单粒子弛豫时间的对数奇异性。
We calculate the scattering time (which determines the conductivity) and the single-particle relaxation time (which determines the density of states) for a disordered two-dimensional electron gas in lowest order of the electron-impurity interaction. Analytical results and numerical results for remote impurity doping, homogeneous background doping, interface roughness scattering, and alloy disorder scattering in ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ga}}_{\mathrm{x}}$As quantum wells are presented. Self-consistency effects are also included and provide a theoretical frame for estimating the validity of the results calculated in lowest order of the electron-impurity interaction. A logarithmic singularity is found for the single-particle relaxation time in the case of homogeneous background doping.