Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect
Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect
复制标题
DOI：
10.1063/1.4962721
复制
发表时间：
2016-09
影响因子：
3.2
通讯作者：
T. Gushi;K. Ito;S. Higashikozono;Fumiya Takata;H. Oosato;Y. Sugimoto;K. Toko;S. Honda;T. Suemasu
中科院分区：
文献类型：
--
作者：
T. Gushi;K. Ito;S. Higashikozono;Fumiya Takata;H. Oosato;Y. Sugimoto;K. Toko;S. Honda;T. Suemasu
用磁力显微镜观察了30 nm厚的Fe4N外延膜的畴壁（DW）的磁性结构，并通过微磁学模拟进行了解释.采用分子束外延技术在SrTiO 3（001）衬底上生长了Fe4N薄膜，并通过电子束光刻和反应离子刻蚀技术制备了0.3 μm宽的弧形铁磁纳米带。两个电极安装在纳米带上，相距约12 μm，记录了8K下的电阻。通过改变外部磁场（0.2T）的方向，可以控制位于两个电极之间的纳米带中的DW的存在或不存在。当DW位于电极之间时，电阻增加约0.5 Ω，这表明Fe4N的负各向异性磁电阻效应。电阻变化的电学检测是对Fe4N中电流诱导DW运动的电学检测的重要一步。
The magnetic structure of the domain wall (DW) of a 30-nm-thick Fe4N epitaxial film with a negative spin polarization of the electrical conductivity is observed by magnetic force microscopy and is well explained by micromagnetic simulation. The Fe4N film is grown by molecular beam epitaxy on a SrTiO3(001) substrate and processed into arc-shaped ferromagnetic nanostrips 0.3 μm wide by electron beam lithography and reactive ion etching with Cl2 and BCl3 plasma. Two electrodes mounted approximately 12 μm apart on the nanostrip register an electrical resistance at 8 K. By changing the direction of an external magnetic field (0.2 T), the presence or absence of a DW positioned in the nanostrip between the two electrodes can be controlled. The resistance is increased by approximately 0.5 Ω when the DW is located between the electrodes, which signifies the negative anisotropic magnetoresistance effect of Fe4N. The electrical detection of the resistance change is an important step toward the electrical detection of current-induced DW motion in Fe4N.