Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation
Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation
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DOI：
10.1088/0957-4484/21/13/134014
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发表时间：
2010-04
期刊：
影响因子：
3.5
通讯作者：
M. Volatier;D. Duchesne;R. Morandotti;R. Arès;V. Aimez
中科院分区：
文献类型：
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作者：
M. Volatier;D. Duchesne;R. Morandotti;R. Arès;V. Aimez
半导体纳米波导是光导纳米光子学应用的关键结构。这些波导中单模光的有效引导和限制需要高纵横比的几何形状。在这些条件下，侧壁垂直度变得至关重要。我们使用自上而下的工艺，结合电子束光刻和硬掩模和 GaAs/AlGaAs 半导体的感应耦合等离子体 (ICP) 蚀刻来制造这种结构，其中 Al 浓度从 0% 变化到 100%。 GaAs/AlGaAs 等离子蚀刻是使用含有不同比例 N2 的 Cl2/BCl3/Ar 气体混合物的单步工艺。扫描电子显微镜（SEM）观察表明，氮的存在产生了钝化层的沉积，这对侧壁坡度有显着影响。在非常窄的 N2 范围内获得了近乎理想的垂直侧壁，从而可以为 80 nm 宽的纳米波导生产极高的纵横比 (>32)。
Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics applications. Efficient guiding and confinement of single-mode light in these waveguides require high aspect ratio geometries. In these conditions, sidewall verticality becomes crucial. We fabricated such structures using a top-down process combining electron beam lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a single-step process using a Cl2/BCl3/Ar gas mixture with various fractions of N2. Scanning electron microscope (SEM) observations showed that the presence of nitrogen generated the deposition of a passivation layer, which had a significant effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very narrow range of N2, allowing the production of extremely high aspect ratios (>32) for 80 nm wide nanowaveguides.