Mechanism of 〈112〉/3 slip initiation and anisotropy of γ′ phase in CMSX-4 during creep at 750°C and 750 MPa
Mechanism of 〈112〉/3 slip initiation and anisotropy of γ′ phase in CMSX-4 during creep at 750°C and 750 MPa
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DOI:
10.1016/s0921-5093(03)00148-5
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发表时间:
2003-09
期刊:
影响因子:
6.4
通讯作者:
Qi-zhi Chen;D. Knowles
中科院分区:
文献类型:
--
作者:
Qi-zhi Chen;D. Knowles
Creep deformation defects from tensile creep tests carried out at 750°C under 750 MPa in the approximate orientations [ 1 ̄ 3 6], [001], [011] and [111] for CMSX-4 single crystals have been identified carefully, using transmission electron microscope combined with computer simulated microimages. A series of results have been obtained. (i) It was confirmed that 〈112〉/3 slip in γ′ phase mainly involved the reaction and dissociation of two 〈110〉/2 dislocations which had different Burgers vectors and met at the γ/γ′ interfaces where the product 〈112〉/6 partials were trapped. (ii) At 750°C and 750 MPa, the selectivity among {111}〈112〉 slip systems was sensitive to Schmid factors. The reason for the anisotropy was that the resolved shear stress of highly stressed {111}〈112〉 slip systems in the [ 1 ̄ 3 6], [001] and [011] orientations were just around the critical resolved shear stress of 〈112〉/3 faulting in γ′ phase which was estimated to be ∼300 MPa. Hence, a slight decrease of a RSS could switch off the operation of a {111}〈112〉 slip system, or vice versa. (iii) The activation of {111}〈110〉 slip systems was a necessary but not sufficient factor of initiating 〈112〉/3 faulting in the γ′ particles. The operation of 〈112〉/3 slip and density of superlattice stacking faults were controlled by the RSSs acting on those {111}〈112〉 slip systems.