Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
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DOI：
10.1016/0038-1098(96)00064-6
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发表时间：
1996-04-01
影响因子：
2.1
通讯作者：
Vardar, D
中科院分区：
文献类型：
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作者：
Aydmh, A;Serpenguzel, A;Vardar, D
用硅烷（SiH4）、氮和氨（NH3）的混合物，采用等离子体增强化学气相沉积（PECVD）法制备了氢化非晶氮化硅（a- sinx:H）样品。大多数薄膜表现出可见的光致发光（PL），有些薄膜在退火后发出强烈的光致发光。无NH3生长的薄膜显示深红色的PL，有NH3生长的薄膜显示绿色的PL。这些无氧(O)薄膜的PL性能与氧化硅（SiOx）薄膜和多孔硅薄膜相似。通过红外和x射线光电子能谱分析，我们认为a-SiNx:H薄膜中的PL来源于PECVD过程中形成的Si团簇，并在退火后结晶。我们认为，O的存在并不是高效PL所必需的。
Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH3 exhibit PL in the deep red, those grown with NH3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiOx) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL.