MOS Characteristics of C-Face 4H-SiC
MOS Characteristics of C-Face 4H-SiC
复制标题
C-Face 4H-SiC MOS特性
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
L. Feldman
中科院分区：
文献类型：
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作者：
Z. Chen;A. Ahyi;X. Zhu;M. Li;T. Isaacs;J. Williams;L. Feldman
采用不同的氧化后退火方法钝化氧化物-半导体（O-S）界面，在4 H-SiC的碳表面上制备了金属氧化物半导体（MOS）电容器和MOS场效应晶体管（MOSFET）。研究的各种过程中，顺序后氧化退火在NO原子氢给出了最低的界面陷阱密度（Dit）。直接氧化/钝化在NO中产生更好的I-V特性，虽然所有的钝化环境产生大致相同的击穿场强。n沟道MOSFET在低电场下表现出高的沟道迁移率，这可能是由于O-S界面处存在移动的离子。与硅面的界面陷阱密度，氧化物击穿场，和沟道迁移率的比较。这些比较表明，碳面不提供显着的性能优势。
Metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide–semiconductor (O–S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (Dit). Direct oxidation/passivation in NO yielded somewhat better I–V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O–S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages.