Fabrication and Characterization of MIM Diodes Based on Nb/Nb2O5 Via a Rapid Screening Technique
Fabrication and Characterization of MIM Diodes Based on Nb/Nb2O5 Via a Rapid Screening Technique
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DOI：
10.1002/adma.201101115
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发表时间：
2011-07-19
影响因子：
29.4
通讯作者：
Parilla, Philip A.
中科院分区：
文献类型：
--
作者：
Periasamy, Prakash;Berry, Joseph J.;Parilla, Philip A.
采用一种新颖的、简便的点接触结构的金属-绝缘体-金属（M1/I/M2）二极管制造技术，研究了基于Nb/Nb 2 O 5（M1/I）的不同金属-绝缘体-金属（M1/I/M2）二极管系统的功函数对二极管性能的影响。Nb/Nb 2 O 5/Pt、Nb/Nb 2 O 5/Au、Nb/Nb 2 O 5/Ag和Nb/Nb 2 O 5/Cu实现了优异的二极管性能，证明了超快整流应用的显著前景。Nb/Nb 2 O 5/Pt的非对称性和非线性值分别为1500和4，在0.5 V。
A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb2O5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb2O5/Pt, Nb/Nb2O5/Au, Nb/Nb2O5/Ag and Nb/Nb2O5/Cu demonstrating significant promise for ultrafast rectification applications. The asymmetry and nonlinearity values of the Nb/Nb2O5/Pt are 1500 and 4 at 0.5 V, respectively.