Pure single-photon emission from an InGaN/GaN quantum dot
Pure single-photon emission from an InGaN/GaN quantum dot
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DOI：
10.1063/5.0049488
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发表时间：
2021-06-01
期刊：
影响因子：
6.1
通讯作者：
Arakawa, Y.
中科院分区：
文献类型：
--
作者：
Holmes, M. J.;Zhu, T.;Arakawa, Y.
基于光子的量子技术需要具有高纯度的单光子发射器。InGaN/GaN量子点是开发单光子发射器的有希望的候选者，但通常表现出纯度不足的发射。这里，从InGaN量子点测量具有高纯度的脉冲单光子发射。在准共振脉冲激发下，在没有任何校正的情况下，获得了0.043 +/-0.009的原始g（（2））（0）值。原则上，这样低的值足以用于量子密钥分发系统。(c)2021年作者。
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g((2))(0) value of 0.043 +/- 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems. (c) 2021 Author(s).