Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz
Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz
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DOI：
10.1109/led.2012.2210020
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发表时间：
2012-10-01
影响因子：
4.9
通讯作者：
Moran, David A. J.
中科院分区：
文献类型：
--
作者：
Russell, Stephen A. O.;Sharabi, Salah;Moran, David A. J.
用同外延金刚石证明了50 nm栅长端氢金刚石场效应晶体管的射频性能。外部截止频率达到53千兆赫，我们认为这是金刚石基晶体管报道的最高值。射频小信号等效电路的生成用于提取器件元件，以更好地理解内在和外在操作之间的变化。通过此过程提取了90 GHz的固有截止频率，验证了最小化接入电阻以最大化该技术潜在高频性能的要求。
Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of 53 GHz is achieved which we believe to be the highest value reported for a diamond-based transistor. The generation of an RF small signal equivalent circuit is used to extract device elements to better understand variation between intrinsic and extrinsic operation. An intrinsic cutoff frequency of 90 GHz is extracted through this process, verifying the requirement to minimize access resistance to maximize the potential high-frequency performance of this technology.