Calculation of integrated intensities in aberration-corrected Z-contrast images

Calculation of integrated intensities in aberration-corrected Z-contrast images
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DOI:
10.1093/jmicro/dfq078
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发表时间:
2011-02-01
期刊:
JOURNAL OF ELECTRON MICROSCOPY
影响因子:
--
通讯作者:
Pennycook, Stephen J.
Pennycook, Stephen J.
中科院分区:
其他
文献类型:
--
作者:
Molina, Sergio I.;Guerrero, Maria P.;Pennycook, Stephen J.

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列入空间不相干性已被证明给非像差校正的高角度环形暗场扫描透射电子显微镜图像和理论模拟之间的定量协议。在这里,我们表明,使用相同的方法,在InAsP三元半导体合金的计算和实验归一化的积分强度之间的相关性得到显着改善,但残留的差异仍然存在。我们已经证明,在校准样品中获得的实验强度,归一化的积分强度显示出低依赖于样品厚度在很宽的范围内的厚度值,在良好的协议。这种行为不会发生在传统的(非像差校正)的图像,并构成了一个强大的工具,直接解释的高分辨率图像的原子列解析的组成图。
Inclusion of spatial incoherence has been shown to give quantitative agreement between non-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy images and theoretical simulations. Here we show that, using the same approach, a significant improvement in the correlation between calculated and experimental normalized integrated intensities is obtained in the InAsP ternary semiconductor alloy, but residual discrepancies remain. We have demonstrated, in good agreement with experimental intensities obtained in calibrated samples, that normalized integrated intensities show a low dependence on the sample thickness over a wide range of thickness values. This behaviour does not occur in conventional (non-aberration-corrected) images and constitutes a powerful tool for straightforward interpretation of high-resolution images in terms of atomic column-resolved compositional maps.