TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
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DOI：
10.1103/physrev.169.619
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发表时间：
1968-01-01
期刊：
影响因子：
--
通讯作者：
FOWLER, AB
中科院分区：
文献类型：
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作者：
FANG, FF;FOWLER, AB
本文报道了Si的有效迁移率、场效应迁移率、霍尔迁移率和载流子密度作为垂直于表面的场的函数的测量。在4.2 ~ 300 K的所有温度下，至少观察到一个迁移率最大值。报道了不同场的温度依赖性。在室温下，在接近反演阈值处观察到迁移率的单个最大值。随着温度的降低，这个峰值增大。在接近80 K的温度下，它开始下降。另一个最大值出现在100 K左右；它随着温度的降低而增加。电导阈值在77.3 K和4.2 K之间发生了异常变化，这与氧化物中的电荷有关。报道了衬底偏压的影响。对可能的散射机制作了一些评论。测量了界面态的影响，并报道了其在导带附近的密度。
Measurements of the effective mobility, field effect mobility, Hall mobility, and carrier density of Si as a function of field perpendicular to the surface are reported. At all temperatures from 4.2 to 300 K, at least one maximum in the mobility was observed. The temperature dependence is reported for different fields. At room temperature, a single maximum in the mobility was observed close to the threshold for inversion. As the temperature was lowered, this peak increased. At temperatures near 80 K, it then decreased. Another maximum appeared at about 100 K at higher fields; it increased as the temperature was lowered. An anomalous shift in the conductance threshold between 77.3 and 4.2 K is reported and is correlated with the charge in the oxide. Effects of substrate bias are reported. Some comments are made on possible scattering mechanisms. The effect of interface states was measured and their density near the conduction band is reported.