Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
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DOI：
10.1063/1.2832771
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发表时间：
2008-01-14
影响因子：
4
通讯作者：
Bogart, L. K.
中科院分区：
文献类型：
--
作者：
Atkinson, D.;Eastwood, D. S.;Bogart, L. K.
在这里，我们报告的控制畴壁钉扎在坡莫合金平面纳米线图案化的缺口功能通过选择微磁配置的畴壁使用横向磁场。畴壁行为进行了研究，实验使用聚焦磁光克尔效应测量光刻图案化的纳米线和微磁模拟。所观察到的钉扎行为被用于可用作磁性随机存取存储器中的自由层的多位存储器单元的概念中，其中畴结构由畴壁的位置限定，所述畴壁的位置取决于所选择的畴壁配置来钉扎或通过钉扎结构。(c)2008年美国物理研究所。
Here, we report on the control of domain wall pinning at notch features patterned in Permalloy planar nanowires by selecting the micromagnetic configuration of the domain wall using a transverse magnetic field. The domain wall behavior was investigated both experimentally using focused magneto-optic Kerr effect measurements of lithographically patterned nanowires and with micromagnetic simulations. The pinning behavior observed is utilized in a concept for multibit memory cells applicable as the free layer in magnetic random access memory where the domain structure is defined by the location of domain walls that either pin or passby pinning structures depending upon the domain wall configuration selected. (c) 2008 American Institute of Physics.