Study of Vertical Ga 2 O 3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
Study of Vertical Ga 2 O 3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation
复制标题
使用稳健 TCAD 仿真研究垂直 Ga 2 O 3 FinFET 短路耐用性
DOI：
10.1149/2162-8777/ac9e73
复制
发表时间：
2022
影响因子：
2.2
通讯作者：
Wong, Hiu Yung
中科院分区：
文献类型：
--
作者：
Lu, Albert;Elwailly, Adam;Zhang, Yuhao;Wong, Hiu Yung
利用工艺计算机辅助设计(TCAD)模拟技术，研究了氧化镓(Ga2 O3)垂直结构FinFET的短路耐用性。Ga2 O3是一种新兴的超宽带隙材料，Ga2 O3垂直FinFET可以实现高压环境下的常关工作。Ga2 O3的导热系数相对较低，因此，探索Ga2 O3垂直FinFET的设计空间，以获得可接受的功率应用短路能力是至关重要的。在这项研究中，使用了适当的TCAD模型和参数，并根据实验数据进行了校准。首次系统地研究了Ga2 O3垂直FinFET击穿电压的模拟精度。结果表明，为了得到正确的结果，背景载波产生速率需要在10 5 cm−3 S−1和10 12 cm−3 S−1之间。在此基础上，研究了800V额定电压、不同鳍间结构的Ga2 O3垂直FinFET的短路耐受时间(SCWT)。结果表明，由于Ga2 O3具有较高的热阻，要获得超临界μS，需要较低的栅极过驱动，使Ron、Sp提高66%，并且Ga2 O3可能在热失控发生之前熔化。这些结果对研制坚固耐用的Ga2O3型功率晶体管具有重要的指导意义。
In this paper, the short circuit ruggedness of Gallium Oxide (Ga 2 O 3) vertical FinFET is studied using Technology Computer-Aided-Design (TCAD) simulations. Ga 2 O 3 is an emerging ultra-wide bandgap material and Ga 2 O 3 vertical FinFET can achieve the normally-off operation for high voltage applications. Ga 2 O 3 has a relatively low thermal conductivity and, thus, it is critical to explore the design space of Ga 2 O 3 vertical FinFETs to achieve an acceptable short-circuit capability for power applications. In this study, appropriate TCAD models and parameters calibrated to experimental data are used. For the first time, the breakdown voltage simulation accuracy of Ga 2 O 3 vertical FinFETs is studied systematically. It is found that a background carrier generation rate between 10 5 cm− 3 s− 1 and 10 12 cm− 3 s− 1 is required in simulation to obtain correct results. The calibrated and robust setup is then used to study the short circuit withstand time (SCWT) of an 800 V-rated Ga 2 O 3 vertical FinFET with different inter-fin architectures. It is found that, due to the high thermal resistance in Ga 2 O 3, to achieve an SCWT> 1 μs, low gate overdrive is needed which increases R on, sp by 66% and that Ga 2 O 3 might melt before the occurrence of thermal runaway. These results provide important guidance for developing rugged Ga 2 O 3 power transistors.