Optimization of Antireflection Multilayer for Industrial Crystalline Silicon Solar Cells
Optimization of Antireflection Multilayer for Industrial Crystalline Silicon Solar Cells
复制标题
DOI：
10.1016/j.egypro.2013.12.017
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
N. Sahouane;A. Zerga
中科院分区：
文献类型：
--
作者：
N. Sahouane;A. Zerga
入射光子在硅表面的反射是光电转换过程中损耗的主要来源。然而，这些损失可以通过沉积抗反射层来最小化，通常是氮化硅SiNx: H，并结合适当的纹理。这一层还应该在出现真正的困境时提供良好的钝化作用。相反，随着Si含量的增加，表面钝化效果越好（n > 2.3的折射率越大），反射率越小。为了实现这一目标，第一种方法是使用具有不同折射率n的两种材料的双重抗反射层。从物理和技术的角度来看，合适的材料有：富氢硅、氮化氧sioxnyy和氧化硅SiOx。为了优化增透多层，我们利用Matlab软件包开发了一个数值模拟代码，其中我们使用传递矩阵的方法求解光学方程。这些解决方案使我们能够绘制出光学反射率和吸收率随波长和层厚度的变化。所考虑的材料的光学折射率和厚度使我们能够具有最低的反射，我们使用PC1D和Silvaco软件来模拟电池的电学特性。因此，我们的研究结果表明，与参考太阳能电池（SARC SiN）相比，第一氧化层（n1=1.5, d1=55 nm）和第二层氮化硅（n2=2.1, d2=53 nm）未封装的电池效率提高了0.3%，有效反射率提高了7.4%。在多层非封装的情况下，我们的优化表明，当折射率（1.48,2和2.4）和厚度（80,5和50）nm时，效率可能提高0.7%。
Reflection of the incident photons by the silicon surface is a major source of losses during photovoltaic conversion. However, these losses can be minimized by depositing an antireflection layer, usually silicon nitride SiNx: H, combined with an appropriate texturing. This layer should also provide a good passivation where a real dilemma can be arising. In contrast the surface passivation gets better with increasing Si content (large optical index for n > 2.3) and the minimum reflectivity was found for small optical index. To achieve this, one first approach consists to use a double antireflective layer with two materials of different refractive index n. Among the materials that are appropriate from the standpoint of physics and technology are SiNx:H-rich silicon, Oxynitride SiOxNyand silicon oxide SiOx. To optimize the antireflection multilayer, we have developed a numerical simulation code with Matlab software package where we have used the method of transfer matrix to solve the optical equation. These solutions permit us to plot the optical reflectivity and the absorption versus wavelengths and layer thicknesses. The optical refractive index and thicknesses of considered materials, which allowed us to have the lowest reflection, were used to simulate the electrical properties of the cell with PC1D and Silvaco software. Thus, our results showed the cell efficiency increase by 0.3% and effective reflectivity of 7.4% is obtained with a first oxide layer (n1=1.5 and d1=55 nm), and a second layer of silicon nitride (n2=2.1 and d2=53 nm) non-encapsulated compared to a reference solar cell (with a SARC SiN). In the case of multilayer non-encapsulated, our optimization has shown that it is possible to increase the efficiency by 0.7% with the refractive index (1.48, 2 and 2.4) and thicknesses (80, 5 and 50) nm.