Oxidation and disorder in few-layered graphene induced by the electron-beam irradiation
Oxidation and disorder in few-layered graphene induced by the electron-beam irradiation
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DOI：
10.1063/1.3587798
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发表时间：
2011-05
影响因子：
4
通讯作者：
Zhiwei Xu;Lei Chen;Jialu Li;Rui Wang;X. Qian;Xiao Song;Liangsen Liu;Guangwei Chen
中科院分区：
文献类型：
--
作者：
Zhiwei Xu;Lei Chen;Jialu Li;Rui Wang;X. Qian;Xiao Song;Liangsen Liu;Guangwei Chen
研究了5 MeV高能电子束辐照少层石墨烯引起的结构变化。用X射线衍射仪、拉曼光谱和X射线光电子能谱对原始和辐照后的少层石墨烯进行了表征。发现氧化石墨烯有一个典型的衍射峰，这可能是由于辐照诱导了少层石墨烯的部分氧化。此外，随着D-G带强度比的增大，少层石墨烯的石墨化结构也变得无序。
Structural changes caused by an electron beam with the high irradiation energy of 5 MeV were investigated in few-layered graphene. Both the original and the irradiated few-layered graphene were characterized by x-ray diffraction, Raman spectroscopy, and x-ray photoelectron spectroscopy. It was found that a typical diffraction peak of graphene oxide emerged and this may be attributed to a partial oxidation in few-layered graphene which was induced by the irradiation. In addition, the graphitic structure of few-layered graphene was found to be disordered according to the increased intensity ratio of D to G band.