Plasma Enhanced Chemical Vapor Deposition of Fluorinated Amorphous Carbon Thin Films from Tetrafluoroethylene and Tetraisocyanatesilane
Plasma Enhanced Chemical Vapor Deposition of Fluorinated Amorphous Carbon Thin Films from Tetrafluoroethylene and Tetraisocyanatesilane
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四氟乙烯和四异氰酸酯硅烷氟化非晶碳薄膜的等离子体增强化学气相沉积
DOI：
10.1023/b:papo.0000005942.82289.25
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
S. Nishino
中科院分区：
文献类型：
--
作者：
T. Shirafuji;Y. Nakagami;Y. Hayashi;S. Nishino
采用射频等离子体增强化学气相沉积法，以四氟乙烯（TFE; C2F4）和四异氰酸酯硅烷（TICS; Si(NCO)4）为原料制备了氟化非晶碳膜，并将其应用于大规模集成电路中的层间低介电常数薄膜。利用x射线光电子能谱和傅里叶变换红外光谱研究了沉积膜的结构。用胶带剥离法检测了其粘附特性。从金属-绝缘体-半导体结构的电容测量出发，研究了薄膜的介电常数。结构分析表明，尽管tic分子中含有异氰酸酯基团，但沉积膜中含有亚胺类基团。在流量比为TICS/(TFE + TICS) = 70%时沉积的薄膜介电常数为2.3，在硅衬底上的附着力较好，热稳定性优于无TICS沉积的薄膜。
Fluorinated amorphous carbon films were prepared from tetrafluoroethylene (TFE; C2F4) and tetraisocyanatesilane (TICS; Si(NCO)4) using an RF plasma enhanced chemical vapor deposition method for the purpose of application to inter layer low permittivity films used in large scale integrated circuits. Structure of the deposited films was investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Adhesion characteristics were examined by a tape-peel method. Permittivity of the films was investigated from capacitance measurement on metal-insulator-semiconductor structure. The structural analysis revealed that the deposited films contained imide-like groupin spite of the fact that TICS molecules contained isocyanate group. The films deposited under the flow ratio TICS/(TFE + TICS) = 70% showed permittivity of 2.3, good adhesion on silicon substrates, and higher thermal stability than the films deposited without TICS.