Fabrication of photonic band-gap crystals
Fabrication of photonic band-gap crystals
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DOI：
10.1116/1.588051
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发表时间：
1995-11-01
影响因子：
1.4
通讯作者：
Scherer, A
中科院分区：
文献类型：
--
作者：
Cheng, CC;Scherer, A
我们描述了三维光子晶体的制造，使用一个可重复的和可靠的程序组成的电子束光刻，然后通过一系列的干蚀刻步骤。仔细的制造，使我们能够定义光子晶体与280 nm的孔定义与359 nm的中心间距在GaAsP和GaAs外延层。我们构建这些光子晶体的孔从70 nm厚的聚甲基丙烯酸甲酯抗蚀剂层转移到300 nm厚的二氧化硅离子蚀刻掩模的亚微米图案，然后各向异性角度蚀刻的III-V族半导体材料使用此掩模。在这里，我们展示了用于生成具有多达四个晶格周期深度的光子晶体的过程。(C)1995年美国真空学会。
We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps. Careful fabrication has enabled us to define photonic crystals with 280 nm holes defined with 359 nm center to center spacings in GaAsP and GaAs epilayers. We construct these photonic crystals by transferring a submicron pattern of holes from 70-nm-thick polymethylmethacrylate resist layers into 300-nm-thick silicon dioxide ion etch masks, and then anisotropically angle etching the III-V semiconductor material using this mask. Here, we show the procedure used to generate photonic crystals with up to four lattice periods depth. (C) 1995 American Vacuum Society.