Direct electrical measurement of the self-assembled nickel silicide nanowire
Direct electrical measurement of the self-assembled nickel silicide nanowire
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DOI：
10.1021/nl0602894
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发表时间：
2006-07-12
期刊：
影响因子：
10.8
通讯作者：
Anderson, Wayne A.
中科院分区：
文献类型：
--
作者：
Kim, Joondong;Anderson, Wayne A.
我们展示了生长纳米线的直接电学测量结果。硅化镍（NiSi）纳米线在用于测量的两个电极之间的沟槽上自发生长。 NiSi纳米线直径为58纳米，长度为2.9微米，表现出147.9Ω的低电阻特性。这种独特的方法非常简单，不需要将生长的纳米线移至测量环境中。
We present results from the direct electrical measurement of an as-grown nanowire. The nickel silicide (NiSi) nanowire was spontaneously grown across a trench between two electrodes used for measurement. The NiSi nanowire, 58 nm in diameter and 2.9 mu m in length, showed a low resistance characteristic of 147.9 Omega. This unique method is straightforward and does not require removal of a grown nanowire to be moved into a measurement environment.