Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
复制标题
DOI：
10.1364/oe.19.025528
复制
发表时间：
2011-12-05
期刊：
影响因子：
3.8
通讯作者：
Wang, George T.
中科院分区：
文献类型：
--
作者：
Li, Qiming;Westlake, Karl R.;Wang, George T.
垂直排列的InGaN/GaN纳米棒发光二极管（LED）阵列是使用由等离子体蚀刻和各向异性湿法蚀刻组成的新的自上而下的制造技术从平面LED结构创建的。湿法蚀刻产生具有可控直径的直的、平滑的、良好刻面的纳米棒，并去除等离子体蚀刻损伤。94%的纳米棒LED是无位错的，并且由于减少的压电场而观察到减少的量子限制斯塔克效应。尽管有这些优点，但通过光致发光测量的纳米棒LED的IQE与平面LED相当，这可能是由于低效的热传输和增强的非辐射表面复合。(C)2011年美国光学学会
Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination. (C) 2011 Optical Society of America