Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack
Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack
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DOI：
10.1109/ted.2018.2850042
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发表时间：
2018-07
影响因子：
3.1
通讯作者：
Jiabei He;M. Hua;Zhaofu Zhang;K. J. Chen
中科院分区：
文献类型：
--
作者：
Jiabei He;M. Hua;Zhaofu Zhang;K. J. Chen
在本文中，我们对增强型GaN基全凹陷金属绝缘体半导体场效应晶体管(MIS-FET)和部分凹陷的具有相同栅介质堆叠(LPCVD-SiNx/PECVD-Sinx)的部分凹陷的高电子迁移率晶体管(MIS-HEMTs)进行了系统的比较，获得了良好的长期可靠性和稳定性。尽管具有较大的导通电阻(${R}_{MATHROM{ON}$)，但该MIS-FET具有优异的${V}_{\TEXT{TH}}$均匀性和热稳定性。在长期栅偏压下，MISHEMT和MISFET都表现出类似的小的正偏压温度不稳定性，而MISHEMT的负偏压温度不稳定性比MISFET大得多。在动态栅极偏置应力下，与MIS-HEMT相比，MIS-FET还提供了更高的稳定性。结果表明，在稳定性方面的差异主要源于陷阱态和导电沟道之间空间间隔的不同，并且在MIS-HEMT中的这种差异要大于在MIS-FET中的差异。
In this paper, we carried out a systematic comparison between the enhancement-mode GaN-based fully recessed metal-insulator-semiconductor field-effect transistors (MIS-FETs) and partially recessed MIS-high-electron-mobility transistors (MIS-HEMTs) with the same gate dielectric stack (LPCVD-SiNx/PECVD-SiNx) that has delivered promising long-term reliability and stability. Despite a moderately larger on-resistance ( ${R}_{ \mathrm{ON}}$ ), the MIS-FETs deliver superior ${V}_{\text {TH}}$ uniformity and thermal stability. Under long-term gate bias stress, both the MIS-HEMT and MIS-FET deliver similar small positive-bias temperature instability, while the negative-bias temperature instability of the MIS-HEMT is much larger than that of MIS-FET. The MIS-FET also delivers a higher ${V}_{\text {TH}}$ stability than the MIS-HEMT under dynamic gate bias stress. It is suggested that the differences in ${V}_{\text {TH}}$ stability mainly originate from the different spatial separation between the trap states and the conducting channel, with it being larger in MIS-HEMT than in MIS-FET.