A high performance Ka-band push-push oscillator design using finite ground cpw structure
A high performance Ka-band push-push oscillator design using finite ground cpw structure
复制标题
采用有限接地共面波导结构的高性能Ka波段双推振荡器设计
DOI：
10.1109/apmc.2006.4429524
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
H. Chiou
中科院分区：
文献类型：
--
作者：
Y. Zou;I;H. Chiou
本文报道了采用GaAspHEMT 0.15 μ m工艺设计的Ka波段推挽振荡器和Ku波段基波振荡器。采用有限接地共面波导结构，提高了无源元件的Q值，改善了推挽振荡器的相位噪声，在1 MHz偏移处的相位噪声为-113.2 dBc/Hz。该推挽振荡器的振荡频率为30.3 GHz，最大输出功率为-1.5 dBm，直流功耗为29 mW，在1 MHz失调下的品质因数（FOM）为-188.2 dBc/Hz。
A Ka-band push-push oscillator and a Ku- band fundamental oscillator designed using GaAs pHEMT 0.15 mum technology are reported in this paper. The use of finite ground CPW structure that enhanced Q value of the passive element and improved the phase noise with the value of -113.2 dBc/Hz at 1 MHz offset of the push-push oscillator. The push-push oscillator achieves an oscillating frequency of 30.3 GHz while exhibiting a maximum output power of -1.5 dBm with the DC power consumption of 29 mW, together with a figure-of-merit (FOM) of -188.2 dBc/Hz at 1 MHz offset.