Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma
Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma
复制标题
通过同轴电弧等离子体合成的超纳米晶金刚石/氢化非晶碳复合薄膜中氢终止的证据
DOI:
10.1116/6.0000545
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发表时间:
2019
期刊:
影响因子:
--
通讯作者:
N. Nishikawa
中科院分区:
文献类型:
--
作者:
N. Nishikawa
Ultranonocrystalline diamond/hydrogenated amorphous carbon composite thin films consist of three different components; ultrananocrystalline diamond crystallites, hydrogenated amorphous carbon, and grain boundaries between them. Since grain boundaries contain a lot of dangling bonds and unsaturated bonds, they would be a cause of carrier trap center degrading device performance in possible applications such as UV photo-detectors. We experimentally demonstrate hydrogen atoms preferentially incorporate at grain boundaries and terminate dangling bonds by means of several spectroscopic techniques. XPS measurements cannot detect quantitative transitions of sp^2- and sp^3-hybridized carbons in the films, resulting in 55-59 % of sp^3 contents. On the other hand, FT-IR and NEXAFS exhibit some variations of the amounts of certain carbon hybridization for sure. The former confirms the transformation from sp^2 to sp^3 hydrocarbons by ~10 % by additional hydrogenation, and the latter represents chemical configuration changes from {\pi}* C{\equiv}C and {\pi}* C=C to {\sigma}* C-H. These results can be an evidence of localized hydrogen at grain boundaries, which plays a part in terminating dangling bonds and unsaturated bonds, and they are correlated with the optical and electrical properties of the films investigated in some previous research. Our spectroscopic studies on the hydrogenation effects combined with the discussion on the optical and electrical characteristics confirm that the hydrogenation can be an effective tool of an enhancement of photovoltaic performance in the above sensing applications.
影响因子:
3.7
作者:
Ganguly, Abhijit;Sharma, Surbhi;Hamilton, Jeremy
通讯作者:
Hamilton, Jeremy