Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
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DOI：
10.1063/1.119233
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发表时间：
1997-06
影响因子：
4
通讯作者：
N. Ueda;H. Hosono;Ryuta Waseda;H. Kawazoe
中科院分区：
文献类型：
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作者：
N. Ueda;H. Hosono;Ryuta Waseda;H. Kawazoe
通过浮区法生长β-Ga 2 O3单晶，通过改变生长气氛，将其沿B轴的沿着电导率控制在<10 - 9至38 Ω-1 cm-1。通过使用掺杂有Sn的馈电棒，生长的晶体即使在氧化气氛下也变得高度导电。光学透射谱表明，β-Ga 2 O3单晶在可见光和紫外光区具有良好的透光性，在Nd：YAG激光四倍频（266 nm）处的透过率为20%。随着载流子浓度的增加，禁带宽度逐渐变宽。预计KrF激光器的光可以在重掺杂的β-Ga_2 O_3中传输。
β-Ga2O3 single crystals were grown by the floating zone method and their conductivity along the b axis was controlled from <10−9 to 38 Ω−1 cm−1 by changing the growth atmosphere. By using feed rods doped with Sn, the grown crystal became highly conductive even under oxidative atmosphere. The optical transmission spectra showed that the β-Ga2O3 single crystal with 0.32 mm was transparent in the visible and ultraviolet region, with 20% transmittance at the fourth-harmonic wave of the Nd:YAG laser (266 nm). The band-gap widening was observed with the increasing of the carrier concentration. It is expected that the light of the KrF laser can be transmitted in the heavily doped β-Ga2O3.